SIHH070N60EF-T1GE3

Vishay / Siliconix
78-SIHH070N60EFT1GE3
SIHH070N60EF-T1GE3

Mfr.:

Description:
MOSFETs 600V PowerPAK 8x8 N-CHANNEL

Datasheet:
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Learn more about Vishay / Siliconix SIHH070N60EF-T1GE3

In Stock: 2,594

Stock:
2,594 Can Dispatch Immediately
Factory Lead Time:
2 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (SGD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$10.97 $10.97
$6.92 $69.20
$5.77 $577.00
$5.70 $2,850.00
Full Reel (Order in multiples of 3000)
$4.24 $12,720.00
† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PowerPAK-8 x 8
N-Channel
1 Channel
600 V
36 A
71 mOhms
- 30 V, 30 V
5 V
50 nC
- 55 C
+ 150 C
202 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 38 ns
Forward Transconductance - Min: 10.5 S
Product Type: MOSFETs
Rise Time: 79 ns
Series: SIHH EF
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 55 ns
Typical Turn-On Delay Time: 36 ns
Unit Weight: 50 mg
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
Israel
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SiHH070N60EF Power MOSFET

Vishay SiHH070N60EF Power MOSFET features 4th generation E series technology, low Figure-of-Merit (FOM), and low effective capacitance. This power MOSFET is avalanche energy rated (UIS) and reduces switching and conduction losses. Typical applications include server and telecom power supplies, switch-mode power supplies (SMPS), power factor correction (PFC) power supplies, motor drives, battery chargers, and welding.

4th Generation EF Series MOSFETs

Vishay / Siliconix 4th Generation EF Series MOSFETs offer an extremely low figure-of-merit (FOM) rating for high-performance switching and high efficiency. The MOSFET FOM is calculated as ON-resistance (R(DS)ON) multiplied by gate charge (Qg). Built on Vishay 4th generation super-junction technology, these MOSFETs feature a low typical ON-resistance range of 0.088Ω to 0.225Ω at VGS=10V and a gate charge down to 21nC. For improved switching performance, these devices provide low effective output capacitances (Co(er) and Co(tr)). These values translate into reduced conduction and switching losses to save energy. Vishay / Siliconix 4th Generation EF Series MOSFETs are offered in PowerPAK® 8x8 and TO-220AB packages. The series is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.

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