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SIA436DJ-T1-GE3

Name: Vishay SIA436DJ-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SIA436DJ-T1-GE3
Price: 1.39 SGD
Availability: InStock

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Mouser No:

78-SIA436DJ-T1-GE3

Mfr. No:

SIA436DJ-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 8V Vds 5V Vgs PowerPAK SC-70

Datasheet:

SIA436DJ-T1-GE3 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors SIA436DJ-T1-GE3

In Stock: 37,118

Stock:: 37,118 Can Dispatch Immediately

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Factory Lead Time:: 7 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.39	$1.39
	$0.866	$8.66
	$0.566	$56.60
	$0.436	$218.00
	$0.395	$395.00
Full Reel (Order in multiples of 3000)
	$0.348	$1,044.00
	$0.321	$1,926.00
	$0.313	$2,817.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SC-70-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	8 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	9.4 mOhms
Vgs - Gate-Source Voltage:	- 5 V, 5 V
Vgs th - Gate-Source Threshold Voltage:	350 mV
Qg - Gate Charge:	15 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	19 W
Channel Mode:	Enhancement
Tradename:	TrenchFET, PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	8 ns
Forward Transconductance - Min:	70 S
Product Type:	MOSFETs
Rise Time:	10 ns
Series:	SIA
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	11 ns
Part # Aliases:	SIA436DJ-GE3
Unit Weight:	1 g

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Datasheet

SIA436DJ-T1-GE3 Datasheet

Models

PCN

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

SIA436DJ N-Channel 8V TrenchFET® MOSFET

Vishay / Siliconix SIA436DJ N-Channel 8V TrenchFET® MOSFET is offered in a compact PowerPAK SC-70 package to save PCB space in portable electronics. This MOSFET comes with on-resistance values that are 18% lower than previous generation solutions and up to 64% lower than the closest competing N-channel device in a 2mm x 2mm footprint area. This ultra-low on-resistance translates into lower conduction losses for reduced power consumption, in addition to a lower voltage drop across the load switch to prevent an unwanted undervoltage lockout. Vishay / Siliconix SiA436DJ on-resistance ratings are down to 1.2V, which simplifies circuit design by allowing the MOSFET to work with the low voltage power rails common in handheld devices, providing longer battery operation between charges.