It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

DI105N04PQ-AQ

Name: Diotec Semiconductor DI105N04PQ-AQ
Brand: Diotec Semiconductor
SKU: 637-DI105N04PQ-AQ
Price: 2.32 SGD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

637-DI105N04PQ-AQ

Mfr. No:

DI105N04PQ-AQ

Mfr.:

Diotec Semiconductor

Description:

MOSFETs MOSFET, PowerQFN 5x6, 40V, 105A, 150C, N, AEC-Q101

Datasheet:

DI105N04PQ-AQ Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Diotec Semiconductor DI105N04PQ-AQ

In Stock: 4,403

Stock:: 4,403 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$2.32	$2.32
	$1.81	$18.10
	$1.09	$109.00
	$1.08	$540.00
	$1.04	$1,040.00
	$0.923	$2,307.50
Full Reel (Order in multiples of 5000)
	$0.867	$4,335.00
	$0.748	$7,480.00
25,000	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diotec Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	QFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	105 A
Rds On - Drain-Source Resistance:	2.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Qg - Gate Charge:	23 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	83 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diotec Semiconductor
Configuration:	Single
Fall Time:	9.4 ns
Forward Transconductance - Min:	116 S
Product Type:	MOSFETs
Rise Time:	8.3 ns
Series:	DI100N
Factory Pack Quantity:	5000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	12 ns
Part # Aliases:	N-CHANNEL

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

DI105N04PQ-AQ Datasheet (PDF)

Models

Full Material Declaration (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

DI105N04PQ N-Channel Power MOSFET

Diotec Semiconductor DI105N04PQ N-Channel Power MOSFET is a 40V drain-source voltage (V_DSS) N-channel power MOSFET in a low profile, space-saving TDSON-8 package. It comes with a 105A continuous drain current (I_D) and 83W power dissipation (P_tot). The device offers a low drain-source on-state resistance of 2.9mΩ typical (V_GS=4.5V I_D=50A). The Diotec Semiconductor DI105N04PQ is ideal for DC/DC converters, power supplies, DC drives, power tools, and synchronous rectifier applications.

Automotive Advanced Trench Technology MOSFETs

Diotec Semiconductor Automotive Advanced Trench Technology MOSFETs are AEC-Q101 qualified and leverage advanced trench technology, which enhances performance by providing fast switching times and low total gate charge. This results in improved efficiency and reduced power loss. The Diotec Automotive Advanced Trench Technology MOSFETs also feature low on-state resistance, which minimizes conduction losses and enhances overall system performance. These characteristics make the MOSFETs ideal for various automotive and industrial applications where reliability and efficiency are paramount.