HMC1114 Power Amplifiers

Analog Devices Inc. HMC1114 Power Amplifiers are designed as gallium nitride (GaN) broadband amplifiers. The HMC1114 amplifiers deliver 10W with greater than 50% power added efficiency (PAE) and ±0.5dB typical gain flatness across a 2.7GHz to 3.8GHz bandwidth. The amplifiers can achieve a 41.5dBm PSAT from a 28V at 150mA supply voltage. In addition, the amplifiers offer a typical 35dB signal gain, 25.5dB high-power gain for saturated output power, and a typical 44dBM IP3. Analog Devices Inc. HMC1114 power amplifiers are ideal for pulsed and continuous wave applications. These applications include wireless infrastructure, radars, public mobile radios, and general-purpose amplification.

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Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Operating Frequency
Operating Supply Voltage
Operating Supply Current
Gain
Type
Mounting Style
Package/Case
Technology
P1dB - Compression Point
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Analog Devices RF Amplifier GaN Driver Ampllifier
Datasheet
103In Stock
96On Order
Min.: 1
Mult.: 1

2.7 GHz to 3.8 GHz 28 V 150 mA 35 dB Power Amplifiers SMD/SMT LFCSP-32 GaN 41.5 dBm 44 dBm - 40 C + 85 C HMC1114 Cut Tape
Analog Devices RF Amplifier GaN Driver Ampllifier
Datasheet
Non-Stocked Lead-Time 11 Weeks
Min.: 500
Mult.: 500
Reel: 500

2.7 GHz to 3.8 GHz 28 V 150 mA 32 dB Driver Amplifiers SMD/SMT LFCSP-32 GaN - 40 C + 85 C HMC1114 Reel