CY7C1049G30-10VXI

Infineon Technologies
727-CY7C1049G30-10VX
CY7C1049G30-10VXI

Mfr.:

Description:
SRAM CMOS RAM W ECC 4-Mbit

Datasheet:
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Learn more about Infineon Technologies CY7C1049G30-10VXI

In Stock: 65

Stock:
65
Can Dispatch Immediately
On Order:
570
Expected 13/8/2026
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$8.30 $8.30
$7.07 $70.70
$5.88 $147.00
$5.86 $6,680.40

Alternative Packaging

Mfr. Part No.:
CY7C1049G30-10VXIT
Packaging:
Reel, Cut Tape
Availability:
In Stock
Price:
$9.55
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SRAM
RoHS:  
4 Mbit
512 k x 8
10 ns
Parallel
3.6 V
2.2 V
45 mA
- 40 C
+ 85 C
SMD/SMT
SOJ-36
Tube
Brand: Infineon Technologies
Memory Type: Volatile
Moisture Sensitive: Yes
Product Type: SRAM
Factory Pack Quantity: 570
Subcategory: Memory & Data Storage
Type: Asynchronous
Unit Weight: 1.402 g
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Attributes selected: 0

Datasheet

Compliance Codes
CNHTS:
8542329010
CAHTS:
8542320030
USHTS:
8542320041
JPHTS:
854232029
KRHTS:
8542321020
TARIC:
8542324500
MXHTS:
8542320299
ECCN:
3A991.b.2.b
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Taiwan
Country of Diffusion:
Taiwan
The country is subject to change at the time of shipment.

Fast Async SRAMs

Infineon Technologies Fast Async SRAMs include product offerings ranging from 64Kbit up to 32Mbit. Fast SRAMs are available in industry-standard voltage, bus-width, and package options. Developed using Infineon's high-performance CMOS technology, these devices offer fast access times (8ns to 12ns), making them an ideal choice in applications such as switches and routers, IP phones, test equipment, DSLAM cards, and automotive electronics. In addition, Infineon Fast Asynchronous SRAMs are available in industrial and automotive temperature grades.

CY7C1049DV33 Fast Async SRAM

Infineon Technologies CY7C1049DV33 Fast Async SRAM is designed as a high-performance Complementary Metal Oxide Semiconductor (CMOS) Static RAM organized as 512K words by eight bits. The device provides easy memory expansion by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tristate drivers. Users write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).

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