1200V SiC MOSFETs

Nexperia 1200V SiC MOSFETs are housed in 3-pin TO-247-3 and 4-pin TO-247-4 for through-hole PCB mounting. The Nexperia MOSFETs are ideal for high-power and high-voltage industrial applications thanks to excellent temperature stability and fast switching speed. These applications include E-vehicle charging infrastructures, photovoltaic inverters, and motor drives.

Results: 3
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Nexperia SiC MOSFETs TO247 1.2KV 36A N-CH SIC
Datasheet
255In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 120 mOhms - 10 V, + 22 V 2.9 V 44 nC - 55 C + 175 C 202 W Enhancement
Nexperia SiC MOSFETs TO247 1.2KV 66A N-CH SIC
Datasheet
227In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 66 A 60 mOhms - 10 V, + 22 V 2.9 V 84 nC - 55 C + 175 C 319 W Enhancement
Nexperia SiC MOSFETs NSF040120L4A1/SOT8071/TO247-4L
Datasheet
15In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 30

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 53 A 60 mOhms - 10 V, + 22 V 2.9 V 81 nC - 55 C + 175 C 234 W Enhancement