STGWT28IH125DF

STMicroelectronics
511-STGWT28IH125DF
STGWT28IH125DF

Mfr.:

Description:
IGBTs 1250V 25A trench gte field-stop IGBT
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Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
14 Weeks Estimated factory production time.
Minimum: 600   Multiples: 300
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (SGD)

Qty. Unit Price
Ext. Price
$2.22 $1,332.00
$2.15 $5,805.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-3P-3
Through Hole
Single
1.25 kV
2.65 V
- 20 V, 20 V
60 A
375 W
- 55 C
+ 175 C
STGWT28IH125DF
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 30 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 300
Subcategory: IGBTs
Unit Weight: 7 g
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

STGWT28IH125DF Trench Gate Field-Stop IGBT

STMicroelectronics STGWT28IH125DF Trench Gate Field-Stop IGBTs feature an advanced proprietary trench gate field-stop structure. Performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. STMicroelectronics STGWT28IH125DF IGBTs maximize efficiency for any resonant and soft-switching application.

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