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NDSH20120C-F155

Name: onsemi NDSH20120C-F155
Brand: onsemi
SKU: 863-NDSH20120C-F155
Price: 12.98 SGD
Availability: InStock

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Mouser No:

863-NDSH20120C-F155

Mfr. No:

NDSH20120C-F155

Mfr.:

onsemi

Description:

SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO

Datasheet:

NDSH20120C-F155 Datasheet

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Learn more about onsemi NDSH20120C-F155

In Stock: 593

Stock:: 593 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$12.98	$12.98
	$8.91	$89.10
	$6.70	$670.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-2
Configuration:	Single
If - Forward Current:	26 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.75 V
Ifsm - Forward Surge Current:	119 A
Ir - Reverse Current:	2.06 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	NDSH20120C-F155
Packaging:	Tube
Brand:	onsemi
Pd - Power Dissipation:	214 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	450
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	1.2 kV

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Datasheet

NDSH20120C-F155 Datasheet

CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

NDSH20120C-F155 Silicon Carbide Schottky Diode

onsemi NDSH20120C-F155 Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. NDSH20120C-F155 features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. This EliteSiC diode offers a positive temperature coefficient and ease of paralleling.