It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SIRA99DP-T1-GE3

Name: Vishay SIRA99DP-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SIRA99DP-T1-GE3
Price: 4.78 SGD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

78-SIRA99DP-T1-GE3

Mfr. No:

SIRA99DP-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs PPAKSO8 P-CH 30V 47.9A

Datasheet:

SIRA99DP-T1-GE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay Semiconductors SIRA99DP-T1-GE3

In Stock: 2,824

Stock:: 2,824

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 6,000

Expected 21/10/2026
Factory Lead Time:: 32

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$4.78	$4.78
	$3.13	$31.30
	$2.18	$218.00
	$1.89	$945.00
	$1.81	$1,810.00
Full Reel (Order in multiples of 3000)
	$1.53	$4,590.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-SO-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	195 A
Rds On - Drain-Source Resistance:	1.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	172.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	104 W
Channel Mode:	Enhancement
Tradename:	PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	57 ns
Forward Transconductance - Min:	114 S
Product Type:	MOSFETs
Rise Time:	183 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	64 ns
Typical Turn-On Delay Time:	69 ns
Unit Weight:	506.600 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SiRA99DP 30V P-Channel MOSFET

Vishay Semiconductors SiRA99DP 30V P-Channel MOSFET is a TrenchFET^®Gen IV power MOSFET with low on-resistance, minimizing voltage drop and reducing conduction loss. This SiRA99DP operates in a temperature range of -55°C to +150°C and is available in a single configuration PowerPAK^® SO-8 package. Vishay Semiconductors SiRA99DP 30V P-Channel MOSFET is RoHS compliant and halogen free. Typical applications include load switches, adapter and charger switches, battery protection, and motor drive control.

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.