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STGIPQ4C60T-HZ

Name: STMicroelectronics STGIPQ4C60T-HZ
Brand: STMicroelectronics
SKU: 511-STGIPQ4C60T-HZ
Price: 13.52 SGD
Availability: InStock

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Mouser No:

511-STGIPQ4C60T-HZ

Mfr. No:

STGIPQ4C60T-HZ

Mfr.:

STMicroelectronics

Description:

Intelligent Power Modules - IPMs SLLIMM nano 2nd series IPM, 3-phase inverter, 6 A, 600 V, short-circuit rugged I

Complete Your Design

Datasheet:

STGIPQ4C60T-HZ Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STGIPQ4C60T-HZ

In Stock: 325

Stock:: 325 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$13.52	$13.52
	$9.26	$92.60
	$6.34	$634.00
	$6.19	$2,228.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Intelligent Power Modules - IPMs
RoHS:
Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	600 V
Continuous Collector Current at 25 C:	6 A
Maximum Operating Temperature:	+ 125 C
Minimum Operating Temperature:	- 40 C
Mounting Style:	Through Hole
Package/Case:	N2DIP-26L
Packaging:	Tube
Pd - Power Dissipation:	12.5 W
Product Type:	Intelligent Power Modules - IPMs
Factory Pack Quantity:	360
Subcategory:	Discrete and Power Modules
Technology:	Si
Type:	3-Phase IGBT Inverter
Unit Weight:	4.595 g

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Filter Document:

Datasheet

STGIPQ4C60T-HZ Datasheet (PDF)

PCN

Technical Resources

Mounting instruction for SLLIMM -nano 2nd series (PDF)

Compliance Codes

CNHTS:: 8542391090
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STGIPQ4C60T-HZ SLLIMM nano IGBTs

STMicroelectronics STGIPQ4C60T-HZ SLLIMM nano IGBTs provide a compact, high-performance AC motor drive in a simple, rugged design. The STGIPQ4C60T-HZ IGBTs are composed of six improved short-circuit rugged trench gate field stop IGBTs with freewheeling diodes and three half-bridge HVICs for gate driving. This provides low electromagnetic interference (EMI) characteristics with optimized switching speed.