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SQS414CENW-T1_GE3

Name: Vishay SQS414CENW-T1_GE3
Brand: Vishay / Siliconix
SKU: 78-SQS414CENW-T1_GE3
Price: 1.4 SGD
Availability: InStock

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Mouser No:

78-SQS414CENW-T1_GE3

Mfr. No:

SQS414CENW-T1_GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET

Datasheet:

SQS414CENW-T1_GE3 Datasheet

ECAD Model:

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More Information

Learn more about Vishay / Siliconix SQS414CENW-T1_GE3

In Stock: 2,495

Stock:: 2,495

Can Dispatch Immediately

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On Order:: 12,000

Expected 18/2/2026
Factory Lead Time:: 4

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.40	$1.40
	$0.898	$8.98
	$0.591	$59.10
	$0.466	$233.00
	$0.421	$421.00
Full Reel (Order in multiples of 3000)
	$0.364	$1,092.00
	$0.336	$2,016.00
	$0.302	$2,718.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK 1212-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	23 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	8.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	33 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	9.6 S
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	SQS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	8 ns

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Datasheet

SQS414CENW-T1_GE3 Datasheet

Technical Resources

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

POWERPAK® 1212 MOSFETs

Vishay POWERPAK® 1212 MOSFETs are ideal for switching applications and boast a die-on resistance of approximately 1mΩ and can handle up to 85A. The Vishay POWERPAK 1212 introduces a packaging technology to mitigate the risk of degrading high-performance dies. This package offers ultra-low thermal impedance in a compact design, making it ideal for space-constrained applications.

SQS414CENW Automotive N-Ch 60V (D-S) 175°C MOSFETs

Vishay / Siliconix SQS414CENW Automotive N-Ch 60V (D-S) 175°C MOSFETs offer TrenchFET® power MOSFET technology in a PowerPAK® 1212-8W single package. The AEC-Q101 qualified SQS414CENW provides a 60V drain-source voltage and 18A continuous drain current. The Vishay / Siliconix SQS414CENW Automotive N-Ch 60V (D-S) 175°C MOSFETs are designed for automotive applications.