GP2T080A120U

SemiQ
148-GP2T080A120U
GP2T080A120U

Mfr.:

Description:
SiC MOSFETs

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about SemiQ GP2T080A120U

In Stock: 99

Stock:
99 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$10.02 $10.02
$5.78 $57.80
$4.84 $580.80
$4.14 $2,111.40

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
80 mOhms
- 5 V, + 20 V
2.8 V
58 nC
- 55 C
+ 175 C
188 W
Enhancement
Brand: SemiQ
Configuration: Single
Fall Time: 10 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 6 ns
Series: GP2T080A120U
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 16 ns
Typical Turn-On Delay Time: 10 ns
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

PCN

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

GP2T080A120U 1200V SiC N-Channel MOSFET

SemiQ GP2T080A120U 1200V SiC N-Channel MOSFET offers low capacitance and high system efficiency. This MOSFET features high-speed switching, increased power density, reduced heat-sink size, and a reliable body diode. The GP2T080A120U 1200V SiC N-Channel MOSFET parts are tested to above 1400V and avalanche tested to 200mJ. This MOSFET can be used in the applications such as solar inverters, EV charging stations, induction heating and welding, and motor drivers.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.