+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SIHR080N60E-T1-GE3

Name: Vishay SIHR080N60E-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SIHR080N60ET1GE3
Price: 9.95 SGD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

78-SIHR080N60ET1GE3

Mfr. No:

SIHR080N60E-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-CHANNEL 600V

Datasheet:

SIHR080N60E-T1-GE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay / Siliconix SIHR080N60E-T1-GE3

In Stock: 2,187

Stock:: 2,187 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$9.95	$9.95
	$7.14	$71.40
	$5.43	$543.00
	$5.10	$5,100.00
Full Reel (Order in multiples of 2000)
	$4.84	$9,680.00
4,000	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	51 A
Rds On - Drain-Source Resistance:	74 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 W
Channel Mode:	Enhancement
Tradename:	PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	31 ns
Forward Transconductance - Min:	4.6 S
Product Type:	MOSFETs
Rise Time:	96 ns
Series:	SIHR E
Factory Pack Quantity:	2000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	31 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SIHR080N60E-T1-GE3 Datasheet

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SiHR080N60E N-Channel Power MOSFET

Vishay / Siliconix SiHR080N60E N-Channel Power MOSFET is a fourth-generation 600V E series power MOSFET in a PowerPAK® 8 x 8LR package. The MOSFET provides higher efficiency and power density for telecom, industrial and computing applications. The SiHR080N60E features a low typical on-resistance of 0.074Ω at 10V and ultra-low gate charge down to 42nC. This results in reduced conduction and switching losses, thereby saving energy and increasing efficiency in power systems >2kW. The package also provides a Kelvin connection for improved switching efficiency. The Vishay / Siliconix SiHR080N60E is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.