NTHL075N065SC1

onsemi
863-NTHL075N065SC1
NTHL075N065SC1

Mfr.:

Description:
SiC MOSFETs SIC MOS TO247-3L 650V

ECAD Model:
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In Stock: 677

Stock:
677 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$12.72 $12.72
$7.37 $73.70

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
38 A
85 mOhms
- 8 V, + 22 V
4.3 V
61 nC
- 55 C
+ 175 C
148 W
Enhancement
EliteSiC
Brand: onsemi
Configuration: Single
Fall Time: 7 ns
Forward Transconductance - Min: 9 S
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 12 ns
Series: NTHL075N065SC1
Factory Pack Quantity: 450
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 20 ns
Typical Turn-On Delay Time: 10 ns
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Attributes selected: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

NTHL075N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NTHL075N065SC1 Silicon Carbide (SiC) MOSFETs offer superior switching performance and higher reliability than Silicon. The onsemi NTHL075N065SC1 features low ON resistance, and the compact chip size ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

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