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QPD1026L

Name: Qorvo QPD1026L
Brand: Qorvo
SKU: 772-QPD1026L
Price: 2024.51 SGD
Availability: OutOfStock

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Mouser No:

772-QPD1026L

Mfr. No:

QPD1026L

Mfr.:

Qorvo

Description:

GaN FETs 1500W, 65V,GaN pre-matched, 442(+/-5) MH

Datasheet:

QPD1026L Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Qorvo QPD1026L

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 16 Weeks Estimated factory production time.

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Est. Tariff:

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$2,024.51	$2,024.51

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Brand:	Qorvo
Maximum Operating Frequency:	450 MHz
Minimum Operating Frequency:	420 MHz
Moisture Sensitive:	Yes
Output Power:	1.5 kW
Packaging:	Waffle
Product Type:	GaN FETs
Series:	QPD1026L
Factory Pack Quantity:	18
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT

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Datasheet

QPD1026L Datasheet (PDF)

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Compliance Codes

USHTS:: 8541497080
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

QPD1026L GaN RF Input-Matched Transistor

Qorvo QPD1026L GaN RF Input-Matched Transistor is a 1300W (P3dB) discrete Gallium Nitride on Silicon Carbide High-Electron Mobility Transistor (GaN on SiC HEMT) operating from 420MHz to 450MHz. The QPD1026L provides a linear gain of 25.9dB at 440MHz. Input prematch within the package results in easier external board matching, saving board space. The device supports both continuous wave and pulsed operations.