BGA855N6E6327XTSA1

Infineon Technologies
726-BGA855N6E6327XTS
BGA855N6E6327XTSA1

Mfr.:

Description:
RF Amplifier RF MMIC SUB 3 GHZ

Datasheet:
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Availability

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0

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On Order:
23,750
Expected 8/4/2027
Factory Lead Time:
30
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 12000)

Pricing (SGD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$1.04 $1.04
$0.739 $7.39
$0.663 $16.58
$0.578 $57.80
$0.539 $134.75
$0.514 $257.00
$0.495 $495.00
$0.474 $1,185.00
$0.461 $2,305.00
Full Reel (Order in multiples of 12000)
$0.461 $5,532.00
† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: RF Amplifier
RoHS:  
1.164 GHz to 1.3 GHz
1.1 V to 3.3 V
4.4 mA
17.6 dB
0.6 dB
Low Noise Amplifiers
SMD/SMT
TSNP-6
SiGe
- 14 dBm
1 dBm
- 40 C
+ 85 C
BGA855N6
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Input Return Loss: 11 dB
Isolation dB: 22 dB
Number of Channels: 1 Channel
Pd - Power Dissipation: 60 mW
Product Type: RF Amplifier
Factory Pack Quantity: 12000
Subcategory: Wireless & RF Integrated Circuits
Test Frequency: 1.214 GHz
Part # Aliases: BGA 855N6 E6327 SP002337750
Unit Weight: 0.830 mg
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Attributes selected: 0

Datasheet

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Compliance Codes
CNHTS:
8542339000
USHTS:
8542330001
TARIC:
8542330000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Germany
Assembly Country of Origin:
China
Country of Diffusion:
Germany
The country is subject to change at the time of shipment.

BGA855N6 Low-Noise RF Amplifier

Infineon Technologies BGA855N6 Low-Noise RF Amplifier enhances GNSS signal sensitivity for L-band applications operating within the 1164MHz to 1300MHz frequency range. This amplifier covers GPS L2/L5, Galileo E5a, E5b, E6, Glonass G3, G2, Beidou B3, and B2 bands. The BGA855N6 amplifier features 17.8dB insertion power gain, low current consumption, high linearity performance, internally matched RF output, and high accuracy. The high linearity performance of BGA855N6 ensures best sensitivity for the operation in 4G & 5G NSA configurations. This amplifier is based on Infineon Technologies‘ B9HF Silicon Germanium technology and operates with a supply voltage of 1.1V to 3.3V.

Low Noise Amplifier (LNA) ICs

Infineon Technologies Low Noise Amplifier (LNA) ICs boost data rates and reception quality of wireless applications by utilizing a very low-power signal without significant signal-to-noise ratio degradation. The improved receiver sensitivity enhances user experiences and satisfies market requirements. These highly integrated, small-packaged devices come with ESD protection and low power consumption, which is ideal for battery-operated mobile devices. Users of 4G/5G, GPS, Mobile TV, Wi-Fi, and FM portable devices will enjoy high data-rate reception, fast/precise navigation, and smooth, high-quality streaming even in the worst reception conditions.

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