SCT4045DWAHRTL

ROHM Semiconductor
755-SCT4045DWAHRTL
SCT4045DWAHRTL

Mfr.:

Description:
SiC MOSFETs TO263 750V 31A N-CH SIC

Datasheet:
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In Stock: 1,996

Stock:
1,996 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 100
Unit Price:
$-.--
Ext. Price:
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Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$15.82 $15.82
$10.97 $109.70
$9.27 $927.00
Full Reel (Order in multiples of 1000)
$9.27 $9,270.00

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TO-263-7
N-Channel
1 Channel
750 V
31 A
59 mOhms
- 4 V, + 21 V
4.8 V
63 nC
+ 175 C
93 W
Enhancement
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 10 ns
Forward Transconductance - Min: 9.3 S
Packaging: Reel
Packaging: Cut Tape
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 16 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: Power MOSFET
Typical Turn-Off Delay Time: 27 ns
Typical Turn-On Delay Time: 5.1 ns
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Attributes selected: 0

Datasheet

Specification Sheets

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USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

SCT4045DWAHR AEC-Q101 N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4045DWAHR AEC-Q101 N-Channel Silicon Carbide (SiC) Power MOSFET is an automotive-grade device engineered for high-efficiency and high-reliability applications in harsh environments. With a drain-source voltage rating of 750V and a continuous drain current of 31A (at +25°C per chip), this dual MOSFET device offers a typical on-resistance of just 45mΩ per channel, enabling reduced conduction losses and improved thermal performance. Packaged in a compact TO-263-7LA configuration, the ROHM SCT4045DWAHR supports high-density designs and efficient thermal management.

AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

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