CLP24H4S30PXY

Ampleon
94-CLP24H4S30PXY
CLP24H4S30PXY

Mfr.:

Description:
GaN FETs CLP24H4S30P/DFN-6.5X7/REEL

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Ampleon CLP24H4S30PXY

In Stock: 87

Stock:
87 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (SGD)

Qty. Unit Price
Ext. Price
$90.68 $90.68
$82.19 $821.90
Full Reel (Order in multiples of 100)
$73.68 $7,368.00

Product Attribute Attribute Value Select Attribute
Ampleon
Product Category: GaN FETs
RoHS:  
SMD/SMT
DFN-6
N-Channel
1 Channel
150 V
774 uA
- 15 V, 2 V
- 2.2 V
+ 225 C
Brand: Ampleon
Gain: 18.4 dB
Moisture Sensitive: Yes
Output Power: 30 W
Packaging: Reel
Packaging: Cut Tape
Product Type: GaN FETs
Factory Pack Quantity: 100
Subcategory: Transistors
Technology: GaN SiC
Type: RF Power MOSFET
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Attributes selected: 0

Datasheet

CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

CLP24H4S30P GaN-SiC HEMT Power Transistor

Ampleon CLP24H4S30P GaN-SiC HEMT Power Transistor is a high-efficiency 30W device designed for continuous wave (CW) applications within the 2400MHz to 2500MHz frequency range. Engineered for use in industrial, scientific, medical, and consumer cooking systems, the Ampleon CLP24H4S30P offers excellent power performance and thermal stability. The device features an internally input-matched design and supports broadband operation, minimizing the need for complex external matching circuits. Housed in a compact 7mm x 7mm DFN surface-mount package, the CLP24H4S30P is ideal for compact, high-power RF amplifier designs.

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