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CY62177EV30LL-55BAXI

Name: Infineon CY62177EV30LL-55BAXI
Brand: Infineon Technologies
SKU: 727CY6217EV305BAXI
Price: 86.58 SGD
Availability: InStock

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Mouser No:

727CY6217EV305BAXI

Mfr. No:

CY62177EV30LL-55BAXI

Mfr.:

Infineon Technologies

Description:

SRAM 32Mb 3V 55ns 2M x 16 LP SRAM

Datasheet:

CY62177EV30LL-55BAXI Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies CY62177EV30LL-55BAXI

In Stock: 64

Stock:: 64

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On Order:: 2,100

Expected 30/7/2026
Factory Lead Time:: 20

Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$86.58	$86.58
	$80.16	$801.60
	$77.40	$1,935.00
	$75.30	$3,765.00
	$74.52	$7,452.00
250	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SRAM
RoHS:
Memory Size:	32 Mbit
Organisation:	4 M x 8/2 M x 16
Access Time:	55 ns
Interface Type:	Parallel
Supply Voltage - Max:	3.6 V
Supply Voltage - Min:	2.2 V
Supply Current - Max:	45 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	SMD/SMT
Package/Case:	FBGA-48
Packaging:	Tray
Brand:	Infineon Technologies
Memory Type:	Volatile
Moisture Sensitive:	Yes
Product Type:	SRAM
Series:	CY62177EV30LL
Factory Pack Quantity:	2100
Subcategory:	Memory & Data Storage
Tradename:	MoBL
Type:	Asynchronous
Unit Weight:	2.191 g

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Datasheet

CY62177EV30LL-55BAXI Datasheet (PDF)

Statement Regarding the RoHS Compliance of Cypress Products

Compliance Codes

CNHTS:: 8542329000
CAHTS:: 8542320041
USHTS:: 8542320041
JPHTS:: 854232019
KRHTS:: 8542321020
TARIC:: 8542324500
MXHTS:: 8542320201
ECCN:: 3A991.b.2.a

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Taiwan
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

Asynchronous SRAM

Infineon Technologies Asynchronous SRAM comes in a broad range of fast asynchronous and low-power asynchronous SRAM (MoBL™) devices. Designers use Asynchronous SRAMs in various industrial, medical, commercial, automotive, and military applications requiring the highest reliability and performance standards.

CY62177EV30 MOBL™ Async SRAM

Infineon Technologies CY62177EV30 MOBL™ Async SRAM is designed as a high-performance CMOS static RAM organized as 2M words by 16 bits and 4M words by 8 bits. CY62177EV30 features an advanced circuit design to offer ultra-low active current. The device is ideal for providing More Battery Life™ (MOBL™) in portable applications such as cellular telephones. In addition, CY62177EV30 includes an automatic power-down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.

MOBL™ Async SRAMs

Infineon Technologies MOBL™ Async SRAM devices comprise a broad portfolio with densities ranging from 64Kb to 64Mb. The MOBL SRAMs are available in industry-standard voltage, bus width, and package options. The devices offer Standby Power Dissipation (maximum) specifications. The MOBL Asynchronous SRAMs are ideal for battery-powered and battery-backed solutions across various application segments. The MOBL SRAM devices are available in industrial, automotive, and radiation-hardened temperature grades.