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SCT4013DW7TL

Name: ROHM Semiconductor SCT4013DW7TL
Brand: ROHM Semiconductor
SKU: 755-SCT4013DW7TL
Price: 46.48 SGD
Availability: InStock

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Mouser No:

755-SCT4013DW7TL

Mfr. No:

SCT4013DW7TL

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs TO263 750V 98A N-CH SIC

Datasheet:

SCT4013DW7TL Datasheet

ECAD Model:

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In Stock: 74

Stock:: 74

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On Order:: 1,000
Factory Lead Time:: 27

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$46.48	$46.48
	$35.90	$359.00
	$32.69	$3,269.00
	$31.71	$15,855.00
Full Reel (Order in multiples of 1000)
	$29.61	$29,610.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	98 A
Rds On - Drain-Source Resistance:	16.9 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	170 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	267 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Compliance:	Done
Configuration:	Single
Fall Time:	17 ns
Forward Transconductance - Min:	32 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	MOSFET's
Product Type:	SiC MOSFETS
Rise Time:	32 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	82 ns
Typical Turn-On Delay Time:	17 ns
Part # Aliases:	SCT4013DW7

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Datasheet

SCT4013DW7TL Datasheet

Specification Sheets

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Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

SCT4013DW7 N-Ch SiC Power MOSFET

ROHM Semiconductor SCT4013DW7 N-Ch SiC Power MOSFET is a 750V, 13mΩ low on-resistance MOSFET designed for fast switching. The SCT4013DW7 offers a fast reverse recovery, is easy to parallel, and is simple to drive. The ROHM SCT4013DW7 is ideal for solar inverters, induction heating, and motor drives.

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.