It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

RH7G04CBKFRATCB

Name: ROHM Semiconductor RH7G04CBKFRATCB
Brand: ROHM Semiconductor
SKU: 755-RH7G04CBKFRATCB
Price: 3.11 SGD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

755-RH7G04CBKFRATCB

Mfr. No:

RH7G04CBKFRATCB

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Nch 40V 40A, DFN3333T8LSAB, Power MOSFET for Automotive

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RH7G04CBKFRATCB Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ROHM Semiconductor RH7G04CBKFRATCB

In Stock: 2,990

Stock:: 2,990 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$3.11	$3.11
	$2.00	$20.00
	$1.35	$135.00
	$1.07	$535.00
	$0.986	$986.00
Full Reel (Order in multiples of 3000)
	$0.895	$2,685.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	5 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	19.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	62 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	9..3 ns
Forward Transconductance - Min:	11 S
Product Type:	MOSFETs
Rise Time:	10.5 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	41.7 ns
Typical Turn-On Delay Time:	14.3 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

RH7G04CBKFRATCB Datasheet

Other

This functionality requires JavaScript to be enabled.

Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

RH7G04CBKFRA P-Ch Power MOSFET

ROHM Semiconductor RH7G04CBKFRA P-Ch Power MOSFET is AEC-Q101 qualified for automotive applications, including infotainment, lighting, ADAS, and body. The device offers a 40V drain-source voltage and ±40A continuous drain current. The ROHM RH7G04CBKFRA MOSFET is available in a DFN-8 package.

125°C I2C BUS EEPROMs for 2-Wire Automotive

ROHM Semiconductor 125°C I²C BUS EEPROMs for 2-Wire Automotive are AEC-Q100 qualified. The ROHM I²C BUS EEPROMs feature two ports of Serial Clock (SCL) and Serial Data (SDA) that all controls are available through. The EEPROMs operate from a wide limit of 1.7V to 5.5V, with a possible 1MHz operation.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.