NDSH40120CDN

onsemi
863-NDSH40120CDN
NDSH40120CDN

Mfr.:

Description:
SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO247-3L

Datasheet:
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Learn more about onsemi NDSH40120CDN

In Stock: 1,112

Stock:
1,112 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$24.85 $24.85
$17.44 $174.40
$14.32 $1,718.40

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC Schottky Diodes
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3LD
Dual Anode Common Cathode
52 A
1.2 kV
1.36 V
123 A
2.39 uA
- 55 C
+ 175 C
NDSH40120CDN
Tube
Brand: onsemi
Pd - Power Dissipation: 217 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 30
Subcategory: Diodes & Rectifiers
Tradename: EliteSiC
Vr - Reverse Voltage: 1.2 kV
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Attributes selected: 0

Datasheet

Compliance Codes
CNHTS:
8541590000
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

NDSH40120CDN Silicon Carbide (SiC) SCHOTTKY Diode

onsemi  NDSH40120CDN Silicon Carbide (SiC) SCHOTTKY Diode  provides superior switching performance and higher reliability than Silicon. The onsemi diode has no reverse recovery current, temperature-independent switching characteristics and excellent thermal performance. System benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.

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