+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

RD3U041AAFRATL

Name: ROHM Semiconductor RD3U041AAFRATL
Brand: ROHM Semiconductor
SKU: 755-RD3U041AAFRATL
Price: 3.1 SGD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

755-RD3U041AAFRATL

Mfr. No:

RD3U041AAFRATL

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Transistor, MOSFET Nch, 250V(Vdss), 4.1A(Id), (10V Drive)

Datasheet:

RD3U041AAFRATL Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ROHM Semiconductor RD3U041AAFRATL

In Stock: 1,998

Stock:: 1,998 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$3.10	$3.10
	$1.99	$19.90
	$1.35	$135.00
	$1.08	$540.00
	$1.02	$1,020.00
Full Reel (Order in multiples of 2500)
	$0.892	$2,230.00
	$0.845	$4,225.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	250 V
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	1.3 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5.5 V
Qg - Gate Charge:	8.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	29 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	15 ns
Product Type:	MOSFETs
Rise Time:	14 ns
Series:	RD3
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	15 ns
Part # Aliases:	RD3U041AAFRA
Unit Weight:	330 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

                        
ROHM Semiconductors AEC-Q101 qualified products are not 
intended for volume automotive production without ROHM 
Semiconductors prior approval. 

Please contact ROHM Semiconductor for Production Part Approval 
Process (PPAP) requirements or contact a Mouser Technical Sales 
Representative for further assistance. 

5-0617-50

Filter Document:

Datasheet

RD3U041AAFRATL Datasheet

Specification Sheets

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

RD3U041AAFRA N-Ch 250V 4A Power MOSFET

ROHM Semiconductor RD3U041AAFRA N-Ch 250V 4A Power MOSFET features low on-resistance and fast switching. With simple drive circuits and a 250V drain-source voltage, the RD3U041AAFRA is suitable for switching applications. The ROHM RD3U041AAFRA N-Ch 250V 4A Power MOSFET is an automotive-grade MOSFET, which is AEC-Q101 qualified.