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NVHL110N65S3F

Name: onsemi NVHL110N65S3F
Brand: onsemi
SKU: 863-NVHL110N65S3F
Price: 9.88 SGD
Availability: InStock

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Mouser No:

863-NVHL110N65S3F

Mfr. No:

NVHL110N65S3F

Mfr.:

onsemi

Description:

MOSFETs SUPERFET3 650V FRFET110MOHM TO247

Datasheet:

NVHL110N65S3F Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVHL110N65S3F

In Stock: 680

Stock:: 680 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$9.88	$9.88
	$5.67	$56.70
	$4.75	$570.00
	$4.73	$2,412.30

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	58 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	240 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	SuperFET III
Packaging:	Tube
Brand:	onsemi
Configuration:	Single
Fall Time:	16 ns
Forward Transconductance - Min:	17 S
Product Type:	MOSFETs
Rise Time:	32 ns
Series:	SuperFET3
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	61 ns
Typical Turn-On Delay Time:	29 ns
Unit Weight:	6 g

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Datasheet

NVHL110N65S3F Datasheet

PCN

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

NVHL110N65S3F 650V 30A SUPERFET® III Power MOSFET

onsemi NVHL110N65S3F 650V 30A SUPERFET® III Power MOSFET is a high-voltage AEC-Q101 qualified Super-Junction (SJ) MOSFET utilizing Charge Balance technology for outstanding low on-resistance and low gate charge performance. Charge Balance technology minimizes conduction loss, providing superior switching performance and enabling the ability to withstand extreme dV/dt rates. The NVHL110N65S3F SUPERFET III MOSFET is ideal for power systems requiring miniaturization and high efficiency. The NVHL110N65S3F also features optimized reverse recovery body diode performance, resulting in fewer required additional components and improved system reliability.

SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.