TP65B110HRU-TR

Renesas Electronics
227-TP65B110HRU-TR
TP65B110HRU-TR

Mfr.:

Description:
GaN FETs 650V, 110mohm GaN BDS in TOLT

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Renesas Electronics TP65B110HRU-TR

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
1,254
Expected 18/9/2026
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1500)

Pricing (SGD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$10.85 $10.85
$7.64 $76.40
$6.19 $619.00
$5.49 $2,745.00
$4.54 $4,540.00
Full Reel (Order in multiples of 1500)
$4.41 $6,615.00
† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: GaN FETs
RoHS:  
SuperGaN
Brand: Renesas Electronics
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: GaN FETs
Series: TP65B110HRU
Factory Pack Quantity: 1500
Subcategory: Transistors
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Attributes selected: 0

Datasheet

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Malaysia
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

TP65B110HRU Bi-Directional Switch (BDS)

Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS) is a 650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package. This BDS conducts current and blocks voltage in both directions, combining a high-voltage depletion-mode GaN with low-voltage normally-off silicon MOSFETs. The TP65B110HRU BDS is based on the SuperGaN® Gen 1 bidirectional platform.  This BDS delivers superior performance, standard gate‑drive compatibility, easy integration, and robust reliability. The TP65B110HRU BDS offers breakthrough integration, resulting in reduced component count, lower cost, and a smaller footprint. This BDS enables ultra-fast switching, high efficiency, and higher power density, and is ideal for MHz-class operation and compact magnetics. Typical applications include PV inverters, battery chargers, AI datacenter and telecom power supplies, motor drives, and UPS.

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