RA1C030LDT5CL

ROHM Semiconductor
755-RA1C030LDT5CL
RA1C030LDT5CL

Mfr.:

Description:
MOSFETs Transistor, MOSFET Nch, 20V(Vdss), 3.0A(Id), (2.5V Drive)

ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
29
Expected 17/6/2026
45,000
30,000
Expected 7/9/2026
15,000
Expected 20/10/2026
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$0.931 $0.93
$0.578 $5.78
$0.371 $37.10
$0.281 $140.50
$0.227 $227.00
$0.20 $1,000.00
$0.177 $1,770.00
Full Reel (Order in multiples of 15000)
$0.168 $2,520.00

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
WLCSP-3
N-Channel
1 Channel
20 V
3 A
140 mOhms
- 200 mV, 7 V
1.5 V
1.5 nC
- 50 C
+ 150 C
1 W
Enhancement
Reel
Cut Tape
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 4 ns
Product Type: MOSFETs
Rise Time: 6 ns
Factory Pack Quantity: 15000
Subcategory: Transistors
Typical Turn-Off Delay Time: 15 ns
Typical Turn-On Delay Time: 6 ns
Part # Aliases: RA1C030LD
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Compliance Codes
CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Japan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

RA1C030LD WLCSP MOSFET

ROHM Semiconductor RA1C030LD WLCSP MOSFET is an N-channel MOSFET designed with a low on-resistance and high power package. This device features a 20VDSS drain-source voltage, 3A continuous drain current, and 1W power dissipation. The RA1C030LD MOSFET offers 1.8V drive voltage, Electro-Static Discharge (ESD) protection up to 200V (MM), and up to 2kV (HBM). This MOSFET is suitable for switching circuits, single-cell battery applications, and mobile applications. The RA1C030LD MOSFET is Pb-free, halogen-free, and RoHS-compliant device.