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IPB048N15N5LFATMA1

Name: Infineon IPB048N15N5LFATMA1
Brand: Infineon Technologies
SKU: 726-IPB048N15N5LF
Price: 11.45 SGD
Availability: InStock

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Mouser No:

726-IPB048N15N5LF

Mfr. No:

IPB048N15N5LFATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >100-150V

Datasheet:

IPB048N15N5LFATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IPB048N15N5LFATMA1

In Stock: 7,543

Stock:: 7,543 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$11.45	$11.45
	$7.72	$77.20
	$5.92	$592.00
	$5.15	$2,575.00
Full Reel (Order in multiples of 1000)
	$4.58	$4,580.00
	$4.46	$8,920.00
10,000	Quote

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	3.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.3 V
Qg - Gate Charge:	84 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	313 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	10 ns
Forward Transconductance - Min:	17 S
Product Type:	MOSFETs
Rise Time:	48 ns
Series:	OptiMOS 5
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	42 ns
Typical Turn-On Delay Time:	8 ns
Part # Aliases:	IPB048N15N5LF SP001503860
Unit Weight:	4 g

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Filter Document:

Datasheet

IPB048N15N5LFATMA1 Datasheet (PDF)

Application Notes

Other

Market News OptiMOS Linear FET (PDF)

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

Residential Energy Storage Systems (ESS)

Infineon Residential Storage Solutions (ESS) offers various products to create and manage resilient energy infrastructures. Infineon's distinctive expertise in energy generation, power conversion, transmission, and battery management makes it an ideal natural partner to advance Energy Storage Solutions, especially in terms of efficiency, innovation, performance, and optimal cost.

OptiMOS™ Linear FETs

Infineon Technologies OptiMOS™ Linear FET is a solution to avoid the trade-off between on-state resistance R_DS(on) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. The devices feature the state-of-the-art R_DS(on) of a trench MOSFET and a classic planar MOSFET's wide, safe operating area. The OptiMOS Linear FET prevents damage at the load by limiting high in-rush currents.

Solutions for Light Electric Vehicles (LEV)

Infineon Technologies Solutions for Light Electric Vehicles (LEV) have world-changing potential utilizing the emission-free solution for rising megacities. LEVs apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.