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QPD1029L

Name: Qorvo QPD1029L
Brand: Qorvo
SKU: 772-QPD1029L
Price: 2328.17 SGD
Availability: OutOfStock

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Mouser No:

772-QPD1029L

Mfr. No:

QPD1029L

Mfr.:

Qorvo

Description:

GaN FETs 1.2-1.4GHz,1500W,65V,GaN RF I/P-Mtchd Tr

Datasheet:

QPD1029L Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Qorvo QPD1029L

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 20 Weeks Estimated factory production time.

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Minimum: 18 Multiples: 18

Unit Price:

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Ext. Price:

$-.--

Est. Tariff:

This Product Ships FREE

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$2,328.17	$41,907.06

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Brand:	Qorvo
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Maximum Operating Frequency:	1.4 GHz
Minimum Operating Frequency:	1.2 GHz
Moisture Sensitive:	Yes
Output Power:	1.5 kW
Packaging:	Waffle
Product Type:	GaN FETs
Series:	QPD1029L
Factory Pack Quantity:	18
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT

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Datasheet

QPD1029L Datasheet (PDF)

PCN

Product Change Notification 2026-2-13 (PDF)

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USHTS:: 8541497080
ECCN:: EAR99

QPD1029L GaN RF IMFET Transistor

Qorvo QPD1029L GaN RF Internally Matched FET (IMFET) Transistor is a 1500W (P_3dB) discrete GaN on SiC High Electron Mobility Transistor (HEMT). This RF IMFET operates between a 1.2GHz to 1.4GHz frequency range. The QPD1029L transistor provides ease of external board match and saves board space. This Qorvo transistor is a RoHS-compliant device. The QPD1029L IMFET transistor device is used in an industry-standard air cavity package and is ideally suited for radar.