STD12N60DM2AG

STMicroelectronics
511-STD12N60DM2AG
STD12N60DM2AG

Mfr.:

Description:
MOSFETs Automotive-grade N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
16 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (SGD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$4.43 $4.43
$2.88 $28.80
$2.11 $211.00
$1.78 $890.00
$1.72 $1,720.00
Full Reel (Order in multiples of 2500)
$1.45 $3,625.00
$1.34 $6,700.00
† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
650 V
10 A
440 mOhms
- 25 V, 25 V
3 V
14.5 nC
- 55 C
+ 150 C
110 W
Enhancement
AEC-Q101
MDmesh
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 9.5 ns
Product Type: MOSFETs
Rise Time: 8 ns
Series: STD12N60DM2AG
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 15 ns
Unit Weight: 330 mg
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Attributes selected: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

STD12N60DM2AG N-channel Power MOSFET

STMicroelectronics STD12N60DM2AG N-channel Power MOSFET is a part of the MDmesh™ DM2 fast-recovery diodes. This automotive-grade N-channel power MOSFET offers very low recovery charge (Qrr) and recovery time (trr) combined with low RDS(on). This power MOSFET features low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. STMicroelectronics STD12N60DM2AG N-channel Power MOSFET is suitable for demanding high-efficiency converters and for bridge topologies and ZVS phase-shift converters.