SiCPAK™ F/G 1200V High-Power Modules

GeneSiC Semiconductor SiCPAK™ F/G 1200V High-Power Modules are designed for superior performance and robustness while meeting industry-standard footprints with pin-to-pin combability. These modules are robust, high-voltage, high-efficiency SiC MOSFETs, critical for reliable, harsh-environment, high-power applications. The SiCPAK™ F/G Modules enable expanded applications ranging from 10s kW to MW in rail, EV, fast charging, industry, solar, wind, and energy storage. Epoxy-resin potting technology provides high reliability and improved power/temperature cycling.

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Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Series
Packaging
GeneSiC Semiconductor MOSFET Modules 1200V 5mohm Half-Bridge SiCPAK G SiC Module
Datasheet
96In Stock
Min.: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 216 A 4.6 mOhms 2.2 V - 40 C + 175 C 444 mW SiCPAK G Tray
GeneSiC Semiconductor MOSFET Modules 1200V 5mohm Half-Bridge SiCPAK G SiC Module, TIM
Datasheet
93In Stock
Min.: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 216 A 4.6 mOhms 2.2 V - 40 C + 175 C 444 mW SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 9mohm Full-Bridge SiCPAK G SiC Module
Datasheet
96In Stock
Min.: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 104 A 12.5 mOhms - 40 C + 175 C 216 W SiCPAK G Tray
GeneSiC Semiconductor MOSFET Modules 1200V 9mohm Full-Bridge SiCPAK G SiC Module, TIM
Datasheet
96In Stock
Min.: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 104 A 12.5 mOhms - 40 C + 175 C 216 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 9mohm Half-Bridge SiCPAK F SiC Module
Datasheet
71In Stock
Min.: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 109 A 12.5 mOhms 2.7 V - 40 C + 175 C 238 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 9mohm Half-Bridge SiCPAK F SiC Module, TIM
Datasheet
96In Stock
Min.: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 109 A 12.5 mOhms 2.7 V - 40 C + 175 C 238 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 17mohm Half-Bridge SiCPAK F SiC Module
Datasheet
96In Stock
Min.: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 68 A 23 mOhms 2.2 V - 40 C + 175 C 170 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 17mohm Half-Bridge SiCPAK F SiC Module, TIM
Datasheet
94In Stock
Min.: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 68 A 23 mOhms 2.2 V - 40 C + 175 C 170 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 18mohm Full-Bridge SiCPAK F SiC Module
Datasheet
96In Stock
Min.: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 53 A 24 mOhms 2.2 V - 40 C + 175 C 106 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 18mohm Full-Bridge SiCPAK F SiC Module. TIM
Datasheet
96In Stock
Min.: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 53 A 24 mOhms 2.2 V - 40 C + 175 C 106 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET Modules 1200V 9mohm 3L-T-NPC SiCPAK G SiC Module
Datasheet
96Expected 17/4/2026
Min.: 1
Mult.: 1

SiC Press Fit SiCPAK G 1.2 kV 9.3 mOhms SiCPAK G Tray
GeneSiC Semiconductor MOSFET Modules 1200V 9mohm 3L-T-NPC SiCPAK G SiC Module, TIM
Datasheet
96Expected 17/4/2026
Min.: 1
Mult.: 1

SiC Press Fit SiCPAK G 1.2 kV 9.3 mOhms SiCPAK F Tray