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FDA38N30

Name: onsemi FDA38N30
Brand: onsemi
SKU: 512-FDA38N30
Price: 7.01 SGD
Availability: InStock

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Mouser No:

512-FDA38N30

Mfr. No:

FDA38N30

Mfr.:

onsemi

Description:

MOSFETs UniFET1 300V N-chan MOSFET

Datasheet:

FDA38N30 Datasheet

ECAD Model:

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In Stock: 1,371

Stock:: 1,371 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$7.01	$7.01
	$3.92	$39.20
	$3.24	$388.80
	$2.93	$1,494.30

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-3PN-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	300 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	70 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	60 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 125 C
Pd - Power Dissipation:	312 W
Channel Mode:	Enhancement
Tradename:	UniFET
Packaging:	Tube
Brand:	onsemi
Configuration:	Single
Forward Transconductance - Min:	6.3 S
Product Type:	MOSFETs
Series:	FDA38N30
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	4.600 g

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Datasheet

FDA38N30 Datasheet

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

FDA38N30 Mosfet Power UniFET™ Transistors

onsemi FDA38N30 Mosfet Power UniFET™ Transistors are N-Channel enhancement mode power field effect transistors produced using proprietary, planar stripe, DMOS technology. onsemi's Mosfet Power UniFET Transistors utilize advanced technology that minimizes on-state resistance, provides superior switching performance, and withstands high-energy pulse in the avalanche and commutation mode. Features include fast switching, improved dv/dt capability, ESD improved capability, low gate charge, 300V drain to source voltage, and more.