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SH63N65DM6AG

Name: STMicroelectronics SH63N65DM6AG
Brand: STMicroelectronics
SKU: 511-SH63N65DM6AG
Price: 33.03 SGD
Availability: InStock

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Mouser No:

511-SH63N65DM6AG

Mfr. No:

SH63N65DM6AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET

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Datasheet:

SH63N65DM6AG Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics SH63N65DM6AG

In Stock: 176

Stock:: 176 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 200)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$33.03	$33.03
	$24.34	$243.40
	$17.14	$1,714.00
Full Reel (Order in multiples of 200)
	$17.14	$3,428.00
	$16.55	$6,620.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	ACEPACK SMIT-9
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	53 A
Rds On - Drain-Source Resistance:	64 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4.75 V
Qg - Gate Charge:	80 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	424 W
Channel Mode:	Enhancement
Qualification:	AQG 324
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Dual
Fall Time:	8 ns
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	8 ns
Factory Pack Quantity:	200
Subcategory:	Transistors
Typical Turn-Off Delay Time:	68 ns
Typical Turn-On Delay Time:	28 ns
Unit Weight:	8.200 g

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Datasheet

SH63N65DM6AG Datasheet (PDF)

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Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SH63N65DM6AG Power MOSFET

STMicroelectronics SH63N65DM6AG Power MOSFET is an automotive-grade N-channel MDmesh DM6 half‑bridge topology power MOSFET offering 650V blocking voltage. This power MOSFET is AQG 324 qualified and comes in an ACEPACK SMIT low inductance package. The SH63N65DM6AG power MOSFET features very low switching energies, low thermal resistance, and a 3.4kV_rms/min isolation rating. This power MOSFET has a dice-on Direct Bond Copper (DBC) substrate that helps the package offer low thermal resistance coupled with an isolated top-side thermal pad. The SH63N65DM6AG MOSFET comes in a package with high design flexibility enabling several configurations, including phase-legs, boost, and single-switch through different combinations of internal power switches. This power MOSFET is ideal for switching applications.