NVBG022N120M3S Silicon Carbide (SiC) MOSFETs

onsemi NVBG022N120M3S Silicon Carbide (SiC) MOSFETs are 1200V M3S planar SiC MOSFETs optimized for fast switching applications. The onsemi NVBG022N120M3S features planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This family has optimum performance when driven with an 18V gate drive but also works with 15V gate drives. Typical applications for these MOSFETs include onboard chargers (OBC) and DC/DC converters for electric vehicles (EVs) and hybrid EVs (HEVs).

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Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
Datasheet
818In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 58 A 30 mOhms - 10 V, + 22 V 4.4 V 20 nC - 55 C + 175 C 234 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 40MOHM 1200V M3
Datasheet
240In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 49 A 40.5 mOhms - 8 V, + 22 V 3.22 V 74.5 nC - 55 C + 175 C 297 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 22MOHM M3S 1200V
Datasheet
800Expected 17/4/2026
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 100 A 30 mOhms - 10 V, 22 V 4.4 V 142 nC - 55 C + 175 C 441 W Enhancement