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DMTH10H1M7STLWQ-13

Name: Diodes Incorporated DMTH10H1M7STLWQ-13
Brand: Diodes Incorporated
SKU: 621-MTH10H1M7STLWQ13
Price: 9.13 SGD
Availability: InStock

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Mouser No:

621-MTH10H1M7STLWQ13

Mfr. No:

DMTH10H1M7STLWQ-13

Mfr.:

Diodes Incorporated

Description:

MOSFETs MOSFET BVDSS: 61V~100V PowerDI1012-8 T&R 1.5K

Datasheet:

DMTH10H1M7STLWQ-13 Datasheet (PDF)

ECAD Model:

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Learn more about Diodes Incorporated DMTH10H1M7STLWQ-13

In Stock: 476

Stock:: 476 Can Dispatch Immediately

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Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 476 will be subject to minimum order requirements.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$9.13	$9.13
	$6.13	$61.30
	$4.43	$443.00
	$4.13	$2,065.00
	$3.39	$3,390.00
Full Reel (Order in multiples of 1500)
	$3.37	$5,055.00
24,000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	250 A
Rds On - Drain-Source Resistance:	2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	147 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	6 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diodes Incorporated
Product Type:	MOSFETs
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Datasheet

DMTH10H1M7STLWQ-13 Datasheet (PDF)

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Compliance Codes

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

DMTH10H1M7STLWQ Automotive Enhancement-Mode MOSFET

Diodes Incorporated DMTH10H1M7STLWQ Automotive Enhancement-Mode MOSFET is an N-channel MOSFET featuring a low on-resistance (1.4mΩ typical, 2.0mΩ maximum) and superior switching performance. The DMTH10H1M7STLWQ has a 100V drain-source voltage, a 1µA zero gate voltage drain current, and ±100nA gate-source leakage. This device is AEC-Q101 qualified, supported by a PPAP, and optimized for automotive applications.