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SIHG080N60E-GE3

Name: Vishay SIHG080N60E-GE3
Brand: Vishay / Siliconix
SKU: 78-SIHG080N60E-GE3
Price: 8.65 SGD
Availability: InStock

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Mouser No:

78-SIHG080N60E-GE3

Mfr. No:

SIHG080N60E-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs TO247 600V 35A N-CH MOSFET

Datasheet:

SIHG080N60E-GE3 Datasheet

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In Stock: 999

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$8.65	$8.65
	$5.03	$50.30
	$4.53	$453.00
	$4.03	$2,015.00
	$3.60	$3,600.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247AC-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	35 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	227 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	31 ns
Forward Transconductance - Min:	4.6 S
Product Type:	MOSFETs
Rise Time:	96 ns
Series:	SIHG E
Factory Pack Quantity:	500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	31 ns
Unit Weight:	6 g

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Datasheet

SIHG080N60E-GE3 Datasheet

Technical Resources

TO-247AC (High Voltage)

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Compliance Codes

CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SiHG080N60E E Series Power MOSFETs

Vishay / Siliconix SiHG080N60E E Series Power MOSFETs feature reduced switching and conduction losses utilizing 4th generation E series technology. The SiHG080N60E Power MOSFETs have a 650V drain-source voltage 63nC total gate charge in a TO-247AC package. The SiHG080N60E MOSFETs offer a low figure-of-merit (FOM) R_on x Q_g and a low effective capacitance (C_o(er)).