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ZXMN2F30FHTA

Name: Diodes Incorporated ZXMN2F30FHTA
Brand: Diodes Incorporated
SKU: 522-ZXMN2F30FHTA
Price: 0.79 SGD
Availability: InStock

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See Product Specifications

Mouser No:

522-ZXMN2F30FHTA

Mfr. No:

ZXMN2F30FHTA

Mfr.:

Diodes Incorporated

Description:

MOSFETs 20V N-Channel Enhance. Mode MOSFET

Datasheet:

ZXMN2F30FHTA Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diodes Incorporated ZXMN2F30FHTA

In Stock: 51,738

Stock:: 51,738 Can Dispatch Immediately

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Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 2820

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.792	$0.79
	$0.491	$4.91
	$0.32	$32.00
	$0.242	$121.00
	$0.217	$217.00
Full Reel (Order in multiples of 3000)
	$0.217	$651.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	4.9 A
Rds On - Drain-Source Resistance:	45 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	600 mV
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.4 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	5.6 ns
Forward Transconductance - Min:	8.6 S
Product Type:	MOSFETs
Rise Time:	5.6 ns
Series:	ZXMN2F30
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19.4 ns
Typical Turn-On Delay Time:	2.9 ns
Unit Weight:	8 mg

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Filter Document:

Datasheet

ZXMN2F30FHTA Datasheet (PDF)

PCN

Environmental Compliance (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541219000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

ZXMN Enhancement Mode MOSFETs

The Diodes Inc. ZXMN Enhancement Mode MOSFETs are N-channel enhancement mode MOSFETs featuring low on-resistance, fast switching, and high avalanche withstand capability. The Diodes Inc. ZXMN MOSFETs are ideal for high-efficiency power management applications, including SLIC line drivers for VoIP applications, transformer driving switch, motor control, uninterrupted power supply, and more.

ZXMN2x & ZXMN3x MOSFETs

Diodes Incorporated ZXMN2x and ZXMN3x MOSFETs are offered in compact S0-8 and SOT23 packages. These MOSFETs are ideal for a range of space-starved switching and power management applications. The Diodes Inc. ZXMN2x and ZXMN3x MOSFETs are designed for external switches in buck/boost PoL converters, in which PCB footprint, thermal performance, and low threshold voltage are highly important.