WST41H0D-GP4

Images are for reference only
See Product Specifications

Mouser No:

937-WST41H0D-GP4

Mfr. No:

WST41H0D-GP4

Mfr.:

MACOM

Description:

GaN FETs Die, DC - 4 GHz, 120W, G28V5-1C

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

WST41H0D-GP4 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about MACOM WST41H0D-GP4

Shipping Alert:

Mouser does not sell this product in your region.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	Mouser does not sell this product in your region.
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	84 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	60 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 2 V
Vgs th - Gate-Source Threshold Voltage:	- 2 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Brand:	MACOM
Configuration:	Single
Gain:	17.5 dB
Maximum Operating Frequency:	4 GHz
Minimum Operating Frequency:	0 Hz
Output Power:	223.87 W
Product:	GaN FETs
Product Type:	GaN FETs
Factory Pack Quantity:	10
Subcategory:	Transistors
Technology:	GaN, SiC
Type:	GaN on SiC Transistor

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

WST41H0D-GP4 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: 3A001.b.3.a.4

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GaN on SiC Transistors

MACOM GaN on SiC Transistors are next-generation RF power transistors that deliver industry-leading gain, efficiency, and power in the same compact footprint. These transistors feature 28V operating voltage, up to 8GHz frequency, high efficiency, and high breakdown voltage. The GaN on SiC transistors support high power, gain, and efficiency, while keeping the same footprint, versus previous generations. These transistors are 100% pass-biased JEDEC HAST (JESD22-A110E) and pass-Highly Accelerated Temperature and Humidity Stress Test (HAST). The GaN on SiC transistors are ideal for 2-way private radio, broadband amplifiers, cellular infrastructure, test instrumentation, and general amplification.