It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

TK6R8A08QM,S4X

Name: Toshiba TK6R8A08QM,S4X
Brand: Toshiba
SKU: 757-TK6R8A08QMS4X
Price: 2.84 SGD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-TK6R8A08QMS4X

Mfr. No:

TK6R8A08QM,S4X

Mfr.:

Toshiba

Description:

MOSFETs UMOS10 TO-220SIS 80V 6.8mohm

Datasheet:

TK6R8A08QM,S4X Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba TK6R8A08QM,S4X

In Stock: 488

Stock:: 488 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$2.84	$2.84
	$1.37	$13.70
	$1.33	$133.00
	$0.976	$488.00
	$0.894	$894.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220SIS-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	58 A
Rds On - Drain-Source Resistance:	6.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	39 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	41 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	46 ns
Product Type:	MOSFETs
Rise Time:	39 ns
Series:	UMOS X-H
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	82 ns
Typical Turn-On Delay Time:	54 ns
Part # Aliases:	TK6R8A08QM,S4X(S

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TK6R8A08QM,S4X Datasheet (PDF)

Application Notes

Models

Product Catalogs

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

80V N-Channel U-MOS X-H MOSFETs

Toshiba 80V N-Channel U-MOS X-H MOSFETs provide high-speed switching, a small gate charge, and low power dissipation. The U-MOS X-H MOSFETs offer an excellent drain-source on-resistance (R_DS(ON)) x transmission resistance x input capacitance (C_iss) value leading to high conductivity and low gate driver losses. The reduced output capacitance (C_OSS) lowers the output charge (Q_OSS), increasing the switching efficiency of these devices. These MOSFETs are suitable for switching voltage regulators, motor drivers, and high-efficiency DC-DC converters.