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STGWA40M120DF3

Name: STMicroelectronics STGWA40M120DF3
Brand: STMicroelectronics
SKU: 511-STGWA40M120DF3
Price: 8.69 SGD
Availability: InStock

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Mouser No:

511-STGWA40M120DF3

Mfr. No:

STGWA40M120DF3

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss

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Datasheet:

STGWA40M120DF3 Datasheet (PDF)

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In Stock: 148

Stock:: 148

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On Order:: 600

Expected 16/11/2026
Factory Lead Time:: 14

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$8.69	$8.69
	$4.93	$49.30
	$4.10	$410.00
	$3.67	$2,202.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.85 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	80 A
Pd - Power Dissipation:	468 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	M
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	40 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	38 g

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Datasheet

STGWA40M120DF3 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

S Series Trench Gate Field-Stop IGBTs

STMicroelectronics S Series Trench Gate Field-Stop IGBTs are developed with an advanced proprietary trench gate field-stop structure. STMicroelectronics S Series 1200V IGBTs are tailored to maximize low-frequency industrial system efficiency. A positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive V_CE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.