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SISF20DN-T1-GE3

Name: Vishay SISF20DN-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SISF20DN-T1-GE3
Price: 3.29 SGD
Availability: InStock

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Mouser No:

78-SISF20DN-T1-GE3

Mfr. No:

SISF20DN-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs Nch 60V Vds 20V Vgs PowerPAK 1212-8SCD

Datasheet:

SISF20DN-T1-GE3 Datasheet

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In Stock: 3,592

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.29	$3.29
	$2.11	$21.10
	$1.45	$145.00
	$1.18	$590.00
	$1.12	$1,120.00
Full Reel (Order in multiples of 3000)
	$0.962	$2,886.00
	$0.894	$5,364.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-1212SCD-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	13 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	69.4 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Dual
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	SISF
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	10 ns
Unit Weight:	488.500 mg

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Datasheet

SISF20DN-T1-GE3 Datasheet

Application Notes

PCN

Product Change Notification (PDF)

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

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Vishay Integrated MOSFETs with Common Drain are 1, 2, and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

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