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NVMFS6H864NLT1G

Name: onsemi NVMFS6H864NLT1G
Brand: onsemi
SKU: 863-NVMFS6H864NLT1G
Price: 1.47 SGD
Availability: InStock

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Mouser No:

863-NVMFS6H864NLT1G

Mfr. No:

NVMFS6H864NLT1G

Mfr.:

onsemi

Description:

MOSFETs T8 80V LL SO8FL

Datasheet:

NVMFS6H864NLT1G Datasheet

ECAD Model:

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Learn more about onsemi NVMFS6H864NLT1G

In Stock: 22,638

Stock:: 22,638 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.47	$1.47
	$1.03	$10.30
	$0.98	$24.50
	$0.828	$82.80
	$0.827	$206.75
	$0.667	$333.50
	$0.655	$655.00
Full Reel (Order in multiples of 1500)
	$0.563	$844.50

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	22 A
Rds On - Drain-Source Resistance:	29 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	33 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Product Type:	MOSFETs
Series:	NVMFS6H864NL
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Datasheet

NVMFS6H864NLT1G Datasheet

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

NVMFS6H8x Power MOSFETs

onsemi NVMFS6H8x Power MOSFETs offer 80V, single N-channel, and a small footprint for a compact design. These power MOSFETs are available in 2.1mΩ, 2.8mΩ, 3.7mΩ, and 3.2mΩ R_DS(on)resistance ranges. Features include low R_DS(on) to minimize conduction losses, low Q_G, and low capacitance. The NVMFS6H8x power MOSFETs are RoHS compliant, PPAP capable, and AEC-Q101 qualified. These power MOSFETs operate at -55°C to 175°C operating temperature range.

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (R_DS(ON), ultra-low gate charge (Q_g), and low (Q_g) x R_DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q_g and Q_oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).