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NTP011N15MC

Name: onsemi NTP011N15MC
Brand: onsemi
SKU: 863-NTP011N15MC
Price: 3.22 SGD
Availability: InStock

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Mouser No:

863-NTP011N15MC

Mfr. No:

NTP011N15MC

Mfr.:

onsemi

Description:

MOSFETs PTNG 150V N-FET TO220

Datasheet:

NTP011N15MC Datasheet

ECAD Model:

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In Stock: 747

Stock:: 747

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On Order:: 800

Expected 2/3/2026
Factory Lead Time:: 24

Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$3.22	$3.22
	$2.56	$25.60
	$2.40	$240.00
	$2.20	$1,100.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	74.3 A
Rds On - Drain-Source Resistance:	10.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	37 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	136.4 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Tube
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTP011N15MC
Factory Pack Quantity:	50
Subcategory:	Transistors

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Datasheet

NTP011N15MC Datasheet

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Shielded Gate PowerTrench® MOSFETs

onsemi Shielded Gate PowerTrench® MOSFETs are N-channel and offer optimized switching performance. This MOSFET features a low reverse recovery charge (Qrr) and soft body diode for superior low-noise switching. onsemi Shielded Gate PowerTrench MOSFETs provide high efficiency with lower switching spikes and electromagnetic interference (EMI). They improve the switching Figure of Merit (FOM). Typical applications include synchronous rectification for ATX/server/telecom power-supply units (PSUs), motor drives, uninterruptible power supplies (UPS), and micro solar inverters.