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NTMFS4D2N10MDT1G

Name: onsemi NTMFS4D2N10MDT1G
Brand: onsemi
SKU: 863-NTMFS4D2N10MDT1G
Price: 5.03 SGD
Availability: OutOfStock

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Mouser No:

863-NTMFS4D2N10MDT1G

Mfr. No:

NTMFS4D2N10MDT1G

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V LOW Q 4.2MOHM N-FET SO8FL

Datasheet:

NTMFS4D2N10MDT1G Datasheet

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	113 A
Rds On - Drain-Source Resistance:	4.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	132 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTMFS4D2N10MD
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Datasheet

NTMFS4D2N10MDT1G Datasheet

PCN

Product Change Notification 2026-7-9 (PDF)

Material Composition Disclosure

Compliance Codes

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

Shielded Gate PowerTrench® MOSFETs

onsemi Shielded Gate PowerTrench® MOSFETs are N-channel MOSFETs that minimize on-state resistance and maintain superior switching performance with best-in-class soft body diode. These MOSFET offers lower Q_rr compared to other MOSFETs. onsemi Shielded Gate PowerTrench MOSFETs lower switching noise/electromagnetic interference (EMI). These MOSFETs feature low R_DS(on) to minimize conduction losses and low Q_G and capacitance to minimize driver losses. The Shielded Gate PowerTrench MOSFETs come in a small PQFN8 package with 5mm x 6mm dimensions for compact designs. Typical applications include synchronous rectification (SR), AC-DC and DC-DC power supplies, AC-DC adapters (USB Power Delivery) SR, and load switches.