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NTMFS2D3N04XMT1G

Name: onsemi NTMFS2D3N04XMT1G
Brand: onsemi
SKU: 863-NTMFS2D3N04XMT1G
Price: 2.2 SGD
Availability: InStock

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Mouser No:

863-NTMFS2D3N04XMT1G

Mfr. No:

NTMFS2D3N04XMT1G

Mfr.:

onsemi

Description:

MOSFETs 40V T10M IN S08FL PACKAGE

Datasheet:

NTMFS2D3N04XMT1G Datasheet

ECAD Model:

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In Stock: 5,932

Stock:: 5,932 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$2.20	$2.20
	$1.40	$14.00
	$0.929	$92.90
	$0.762	$381.00
	$0.666	$666.00
Full Reel (Order in multiples of 1500)
	$0.612	$918.00
	$0.563	$1,689.00
	$0.549	$13,176.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	111 A
Rds On - Drain-Source Resistance:	2.35 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	22.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	53 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	4.69 ns
Forward Transconductance - Min:	89.2 S
Product Type:	MOSFETs
Rise Time:	5.19 ns
Series:	NTMFS2D3N04XM
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	22.2 ns
Typical Turn-On Delay Time:	15.8 ns

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Datasheet

NTMFS2D3N04XMT1G Datasheet

PCN

Product Change Notification 2024-02-06 (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

40V Power MOSFETs

onsemi 40V Power MOSFETs feature standard gate-level technology and boast best-in-class on-resistance. The onsemi MOSFETs are designed for motor driver applications. The devices effectively minimize conduction and driving losses with lower on-resistance and reduced gate charge. Additionally, the MOSFETs provide excellent softness control for body diode reverse recovery, effectively mitigating voltage spike stress without needing an extra snubber circuit in applications.

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.