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NTMFS0D6N04XMT1G

Name: onsemi NTMFS0D6N04XMT1G
Brand: onsemi
SKU: 863-NTMFS0D6N04XMT1G
Price: 4.16 SGD
Availability: InStock

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Mouser No:

863-NTMFS0D6N04XMT1G

Mfr. No:

NTMFS0D6N04XMT1G

Mfr.:

onsemi

Description:

MOSFETs 40V T10M IN S08FL HEFET GEN 2 PACKAGE

Datasheet:

NTMFS0D6N04XMT1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTMFS0D6N04XMT1G

In Stock: 4,016

Stock:: 4,016

Can Dispatch Immediately

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On Order:: 1,500

Expected 17/4/2026
Factory Lead Time:: 34

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$4.16	$4.16
	$2.71	$27.10
	$1.88	$188.00
	$1.56	$780.00
	$1.34	$1,340.00
Full Reel (Order in multiples of 1500)
	$1.27	$1,905.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	380 A
Rds On - Drain-Source Resistance:	570 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	86.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	15.3 ns
Forward Transconductance - Min:	175 S
Product Type:	MOSFETs
Rise Time:	15.6 ns
Series:	NTMFS0D6N04XM
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	58.2 ns
Typical Turn-On Delay Time:	33.9 ns

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Datasheet

NTMFS0D6N04XMT1G Datasheet

PCN

Product Change Notification 2025-9-30 (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

40V Power MOSFETs

onsemi 40V Power MOSFETs feature standard gate-level technology and boast best-in-class on-resistance. The onsemi MOSFETs are designed for motor driver applications. The devices effectively minimize conduction and driving losses with lower on-resistance and reduced gate charge. Additionally, the MOSFETs provide excellent softness control for body diode reverse recovery, effectively mitigating voltage spike stress without needing an extra snubber circuit in applications.