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NTHL120N60S5Z

Name: onsemi NTHL120N60S5Z
Brand: onsemi
SKU: 863-NTHL120N60S5Z
Price: 9.97 SGD
Availability: InStock

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Mouser No:

863-NTHL120N60S5Z

Mfr. No:

NTHL120N60S5Z

Mfr.:

onsemi

Description:

MOSFETs SUPERFET5 EASY 120MOHM

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NTHL120N60S5Z Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTHL120N60S5Z

In Stock: 783

Stock:: 783 Can Dispatch Immediately

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Factory Lead Time:: 23 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$9.97	$9.97
	$6.74	$67.40
	$4.92	$492.00
	$4.91	$2,209.50
	$4.73	$4,257.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	28 A
Rds On - Drain-Source Resistance:	120 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	40 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	160 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	onsemi
Configuration:	SIngle
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	3 ns
Forward Transconductance - Min:	17.1 S
Product Type:	MOSFETs
Rise Time:	13 ns
Series:	NTHL120N60S5Z
Factory Pack Quantity:	450
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	78 ns
Typical Turn-On Delay Time:	23 ns

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Datasheet

NTHL120N60S5Z Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

SuperFET® V MOSFETs

onsemi SuperFET^® V MOSFETs are the fifth generation high-voltage Super Junction (SJ) MOSFETs. These devices deliver best-in-class Figure of Merits (FoMs) (R_DS(ON)·Q_G and R_DS(ON)·E_OSS) to improve not only heavy load but also light load efficiency. The 600V SuperFET V MOSFETs provide design benefits through reduced conduction and switching losses while supporting extreme MOSFET dV_DS/dt ratings at 120V/ns. The SuperFET V MOSFET FAST series help to maximize system efficiency and power density. The SuperFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. Typical applications include telecommunication, cloud system, and industrial.