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NTBLS1D7N08H

Name: onsemi NTBLS1D7N08H
Brand: onsemi
SKU: 863-NTBLS1D7N08H
Price: 8.83 SGD
Availability: InStock

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See Product Specifications

Mouser No:

863-NTBLS1D7N08H

Mfr. No:

NTBLS1D7N08H

Mfr.:

onsemi

Description:

MOSFETs T8-80V IN TOLL FOR INDUSTRIAL MARKET

Datasheet:

NTBLS1D7N08H Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTBLS1D7N08H

In Stock: 3,281

Stock:: 3,281 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

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Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$8.83	$8.83
	$5.34	$53.40
	$4.38	$438.00
	$4.09	$2,045.00
	$3.77	$3,770.00
Full Reel (Order in multiples of 2000)
	$3.77	$7,540.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-LL8-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	203 A
Rds On - Drain-Source Resistance:	1.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	121 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	167 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTBLS1D7N08H
Factory Pack Quantity:	2000
Subcategory:	Transistors

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Datasheet

NTBLS1D7N08H Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

Compliance Codes

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Philippines
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are small-footprint and compact MOSFETs with low R_DS(on) and low capacitance. The low R_DS(on) value helps to minimize conduction losses, and low capacitance minimizes driver losses. These single N-channel power MOSFETs are Pb-free and RoHS compliant and feature a -55°C to +175°C operating temperature range.