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NSS40302PDR2G

Name: onsemi NSS40302PDR2G
Brand: onsemi
SKU: 863-NSS40302PDR2G
Price: 2.65 SGD
Availability: InStock

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See Product Specifications

Mouser No:

863-NSS40302PDR2G

Mfr. No:

NSS40302PDR2G

Mfr.:

onsemi

Description:

Bipolar Transistors - BJT COMP NPN/PNP LO VCE 40V 6A

Datasheet:

NSS40302PDR2G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NSS40302PDR2G

In Stock: 5,446

Stock:: 5,446 Can Dispatch Immediately

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Factory Lead Time:: 10 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 610

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$2.65	$2.65
	$1.70	$17.00
	$1.14	$114.00
	$0.899	$449.50
Full Reel (Order in multiples of 2500)
	$0.899	$2,247.50

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Transistor Polarity:	NPN, PNP
Configuration:	Dual
Maximum DC Collector Current:	3 A
Collector- Emitter Voltage VCEO Max:	40 V
Collector- Base Voltage VCBO:	40 V
Emitter- Base Voltage VEBO:	6 V, 7 V
Collector-Emitter Saturation Voltage:	82 mV, 135 mV
Pd - Power Dissipation:	783 mW
Gain Bandwidth Product fT:	100 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	NSS40302PD
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
DC Collector/Base Gain hFE Min:	200 at 10 mA, 2 V, 200 at 500 mA, 2 V, 180 at 1 A, 2 V, 180 at 2 A, 2 V
DC Current Gain hFE Max:	200 at 10 mA, 2 V
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	2500
Subcategory:	Transistors
Unit Weight:	143 mg

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Datasheet

NSS40302PDR2G Datasheet

PCN

Compliance Codes

CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 85423999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Philippines
Country of Diffusion:: Malaysia

The country is subject to change at the time of shipment.

e2PowerEdge Low VCE(sat) Transistors

onsemi e2PowerEdge Low V_CE(sat) Transistors are miniature surface mount devices featuring ultra-low saturation voltage (V_CE(sat)) and high current gain capability. These are designed for low-voltage, high-speed switching applications where affordable, efficient energy control is essential. Typical applications are DC−DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players. Other applications are low-voltage motor controls in mass storage products such as disc and tape drives. These can be used for airbag deployment and instrument clusters in the automotive industry. The high current gain allows onsemi e2PowerEdge devices to be driven directly from PMU’s control outputs, and the linear gain (Beta) makes them ideal components in analog amplifiers.