MR0A08BYS35

Everspin Technologies
936-MR0A08BYS35
MR0A08BYS35

Mfr.:

Description:
MRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM

Datasheet:
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Learn more about Everspin Technologies MR0A08BYS35

Product Attribute Attribute Value Select Attribute
Everspin Technologies
Product Category: MRAM
RoHS:  
TSOP-II-44
Parallel
1 Mbit
128 k x 8
8 bit
35 ns
3 V
3.6 V
25 mA, 55 mA
0 C
+ 70 C
MR0A08B
Tray
Brand: Everspin Technologies
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Pd - Power Dissipation: 600 mW
Product Type: MRAM
Factory Pack Quantity: 135
Subcategory: Memory & Data Storage
Tradename: Parallel I/O (x8)
Unit Weight: 11.146 g
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Attributes selected: 0

Datasheet

PCN

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Compliance Codes
CNHTS:
8542329010
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320312
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.

MR0A08B, MR0D08B, & MR0A16A 1Mb Parallel MRAM

Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance. 

In Stock: 10

Stock:
10
Can Dispatch Immediately
On Order:
405
Expected 16/9/2026
405
Expected 7/10/2026
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$30.56 $30.56
$28.30 $283.00
$25.92 $648.00
$25.30 $1,265.00
$24.55 $2,455.00
$22.90 $6,183.00
$21.92 $11,836.80

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