It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

MR0A08BCYS35

Name: Everspin Technologies MR0A08BCYS35
Brand: Everspin Technologies
SKU: 936-MR0A08BCYS35
Price: 31.51 SGD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

936-MR0A08BCYS35

Mfr. No:

MR0A08BCYS35

Mfr.:

Everspin Technologies

Description:

MRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM

Datasheet:

MR0A08BCYS35 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Everspin Technologies MR0A08BCYS35

In Stock: 410

Stock:: 410 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$31.51	$31.51
	$29.19	$291.90
	$28.27	$706.75
	$27.58	$1,379.00
	$26.60	$2,660.00
	$25.91	$6,995.70
	$24.76	$13,370.40
1,080	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Everspin Technologies
Product Category:	MRAM
RoHS:
Package/Case:	TSOP-II-44
Interface Type:	Parallel
Memory Size:	1 Mbit
Organisation:	128 k x 8
Data Bus Width:	8 bit
Access Time:	35 ns
Supply Voltage - Min:	3 V
Supply Voltage - Max:	3.6 V
Operating Supply Current:	25 mA, 55 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	MR0A08B
Packaging:	Tray
Brand:	Everspin Technologies
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	600 mW
Product Type:	MRAM
Factory Pack Quantity:	135
Subcategory:	Memory & Data Storage
Tradename:	Parallel I/O (x8)
Unit Weight:	5.066 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

MR0A08BCYS35 Datasheet (PDF)

PCN

Alternative Format for Trace Codes (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8542329010
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 8542320312
KRHTS:: 8542321040
MXHTS:: 8542320299
ECCN:: EAR99

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.

MR0A08B, MR0D08B, & MR0A16A 1Mb Parallel MRAM

Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance.